808nm diode laser stack
Wavelength | Model | Power | Bars | Power/Bar | Warranty time |
808nm | SYHR10200 | 200w | 4 | 50W/ Br | 1 Year |
808nm | HR10300 | 250w | 5 | 50W/Bar | 1 Year |
808nm | HR10300 | 300w | 6 | 50W/Bar | 1 Year |
808nm | HR10400 | 350w | 7 | 50W/Bar | 1 Year |
808nm | HR10500 | 500w | 10 | 50W/Bar | 1 Year |
808nm | HR10600 | 600w | 12 | 50W/Bar | 1 Year |
808nm | HR10800 | 800w | 16 | 50W/Bar | 1 Year |
808nm | HR10600 | 600w | 6 | 100W/Bar | 1 Year |
808nm | HR10800 | 800w | 8 | 100W/Bar | 1 Year |
808nm | HR11000 | 1000W | 10 | 100W/Bar | 1 Year |
808nm | HR11200 | 1200w | 12 | 100W/Bar | 1 Year |
808nm | HR11600 | 1600w | 16 | 100W/Bar | 1 Year |
L064=HR10200 200W
4bars*50W 808nm
L069=HR10300 250W
5bars*50W 808nm
L079=HR10300 300W
6bars*50W 808nm
L080=HR10400 350W
7 bars*50W 808nm
L081=HR10500 500W
10bars*50W 808nm
HR10500 500W 10 bars*50W
L082: US chip
4*808nm+3*755nm+3*1064nm
L083: Chinese+US chip
4*808nm+3*755nm(US)+3*1064nm
L084: US chip
4*808nm+4*755nm+2*1064nm
L085: Chinese+US chip
4*808nm+4*755nm(US)+2*1064nm
L086: US chip
8*808nm+2*1064nm L087: Chinese chip
8*808nm+2*1064nm
L088=HR10500 500W
5 bars*100W 808nm US chip
L089=HR10500 500W
5 bars*100W 808nm Chinese chip
L090=HR10600 600W
12 bars*50W 808nm
L091=HR10600 600W
4*755nm+4*808nm+4*1064nm
L092=HR10600 600W
6bars*100W 808nm US chip
L093=HR10600 600W
6bars*100W 808nm Chinese chip
L094=HR10800 800W
8bars*100W 808nm US chip
L095=HR10800 800W
8bars*100W 808nm Chinese chip
L096=HR10800 800W
16bars*50W 808nm Chinese chip
L097=HR10800 800W
16bars*50W US chip
6*808nm+5*755nm+5*1064nm
L098=HR11000 1000W
10bars*100W 808nm US chip
L099=HR11000 1000W
10bars*100W 808nm Chinese chip
L100=HR11200 1200W
12bars*100W 808nm US chip
L101=HR11200 1200W
12bars*100W 808nm Chinese chipComparison with MLKJ Diode Laser Stack
808nm / 800w 8*100W